| Voltage-Sensing Residues in the S2 and S4 Segments of the Shaker K Channel Neuron, Volume 16, Issue 6, 1 June 1996, Pages 1159-1167 Sang-Ah Seoh, Daniel Sigg, Diane M Papazian and Francisco Bezanilla Summary The activation of K channels is steeply voltage dependent. To determine whether conserved charged amino acids in putative transmembrane segments S2, S3, and S4 contribute to the gating charge of the channel, the total gating charge movement per channel was measured in channels containing neutralization mutations. Of eight residues tested, four contributed significantly to the gating charge: E293, an acidic residue in S2, and R365, R368, and R371, three basic residues in the S4 segment. The results indicate that these residues are a major component of the voltage sensor. Furthermore, the S4 segment is not solely resposible for gating charge movement in K channels. Summary | Full Text | PDF (193 kb) |
| Electrostatic Model of S4 Motion in Voltage-Gated Ion Channels Biophysical Journal, Volume 85, Issue 5, 1 November 2003, Pages 2854-2864 Harold Lecar, H. Peter Larsson and Michael Grabe Abstract The S4 transmembrane domain of the family of voltage-gated ion channels is generally thought to be the voltage sensor, whose translocation by an applied electric field produces the gating current. Experiments on hSkMI Na channels and both and EAG K channels indicate which S4 residues cross the membrane-solution interface during activation gating. Using this structural information, we derive the steady-state properties of gating-charge transfer for wild-type and mutant K channels. Assuming that the energetics of gating is dominated by electrostatic forces between S4 charges and countercharges on neighboring transmembrane domains, we calculate the total energy as a function of transmembrane displacement and twist of the S4 domain. The resulting electrostatic energy surface exhibits a series of deep energy minima, corresponding to the transition states of the gating process. The steady-state gating-charge distribution is then given by a Boltzmann distribution among the transition states. The resulting gating-charge distributions are compared to experimental results on wild-type and charge-neutralized mutants of the K channel. Abstract | Full Text | PDF (424 kb) |
| Models of the Structure and Voltage-Gating Mechanism of the Shaker K Channel Biophysical Journal, Volume 87, Issue 4, 1 October 2004, Pages 2116-2130 Stewart R. Durell, Indira H. Shrivastava and H. Robert Guy Abstract In the preceding, accompanying article, we present models of the structure and voltage-dependent gating mechanism of the KvAP bacterial K channel that are based on three types of evidence: crystal structures of portions of the KvAP protein, theoretical modeling criteria for membrane proteins, and biophysical studies of the properties of native and mutated voltage-gated channels. Most of the latter experiments were performed on the K channel. Some of these data are difficult to relate directly to models of the KvAP channel’ structure due to differences in the and KvAP sequences. We have dealt with this problem by developing new models of the structure and gating mechanism of the transmembrane and extracellular portions of the channel. These models are consistent with almost all of the biophysical data. In contrast, much of the experimental data are incompatible with the “paddle” model of gating that was proposed when the KvAP crystal structures were first published. The general folding pattern and gating mechanisms of our current models are similar to some of our earlier models of the channel. Abstract | Full Text | PDF (770 kb) |
Copyright © 1997 The Biophysical Society. All rights reserved.
Biophysical Journal, Volume 72, Issue 4, 1489-1500, 1 April 1997
doi:10.1016/S0006-3495(97)78797-6
Research Article
S.K. Tiwari-Woodruff, C.T. Schulteis, A.F. Mock and D.M. Papazian
Department of Physiology, School of Medicine, University of California, Los Angeles 90095–1751, USA.
In voltage-dependent Shaker K+ channels, charged residues E293 in transmembrane segment S2 and R365, R368, and R371 in S4 contribute significantly to the gating charge movement that accompanies activation. Using an intragenic suppression strategy, we have now probed for structural interaction between transmembrane segments S2, S3, and S4 in Shaker channels. Charge reversal mutations of E283 in S2 and K374 in S4 disrupt maturation of the protein. Maturation was specifically and efficiently rescued by second-site charge reversal mutations, indicating that electrostatic interactions exist between E283 in S2 and R368 and R371 in S4, and between K374 in S4 and E293 in S2 and D316 in S3. Rescued subunits were incorporated into functional channels, demonstrating that a native structure was restored. Our data indicate that K374 interacts with E293 and D316 within the same subunit. These electrostatic interactions mediate the proper folding of the protein and are likely to persist in the native structure. Our results raise the possibility that the S4 segment is tilted relative to S2 and S3 in the voltage-sensing domain of Shaker channels. Such an arrangement might provide solvent access to voltage-sensing residues, which we find to be highly tolerant of mutations.