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Biophys J, April 2002, p. 1773-1783, Vol. 82, No. 4


and
*Departamento de Ciencias Experimentales, Universidad Jaume I,
12080 Castellón, Spain;
The Scientific Council for
Cybernetics, Russian Academy of Sciences, 333117 Moscow, Russia, and
Department of Biology, University of Maryland,
College Park, Maryland 20742 USA
We have analyzed voltage-dependent anion-selective
channel (VDAC) gating on the assumption that the states occupied by the channel are determined mainly by their electrostatic energy. The voltage dependence of VDAC gating both in the presence and in the
absence of a salt activity gradient was explained just by invoking
electrostatic interactions. A model describing this energy in the main
VDAC states has been developed. On the basis of the model, we have
considered how external factors cause the redistribution of the
channels among their conformational states. We propose that there is a
difference in the electrostatic interaction between the voltage sensor
and fixed charge within the channel when the former is located in the
cis side of membrane as opposed to the trans.
This could be the main cause of the shift in the probability curve. The
theory describes satisfactorily the experimental data (Zizi et al.,
Biophys. J. 1998. 75:704-713) and explains some peculiarities of VDAC gating. The asymmetry of the probability curve
was related to the apparent location of the VDAC voltage sensor in the
open state. By analyzing published experimental data, we concluded that
this apparent location is influenced by the diffusion potential. Also
discussed is the possibility that VDAC gating at high voltage may be
better described by assuming that the mobile charge consists of two
parts that have to overcome different energetic barriers in the
channel-closing process.
Biophys J, April 2002, p. 1773-1783, Vol. 82, No. 4
© 2002 by the Biophysical Society 0006-3495/02/04/1773/11 $2.00
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