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Biophys J, April 2001, p. 1802-1809, Vol. 80, No. 4
The Nobel Institute for Neurophysiology, Department of Neuroscience, Karolinska Institutet, SE-171 77 Stockholm, Sweden
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ABSTRACT |
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The opening and closing of the pore of voltage-gated ion channels is the basis for the nervous impulse. These conformational changes are triggered by the movement of an intrinsic voltage sensor, the fourth transmembrane segment, S4. The central problem of how the movement of S4 is coupled to channel opening and where S4 is located in relation to the pore is still unsolved. Here, we estimate the position of the extracellular end of S4 in the Shaker potassium channel by analyzing the electrostatic effect of introduced charges in the pore-forming motif (S5-S6). We also present a three-dimensional model for all transmembrane segments. Knowledge of this structure is essential for the attempts to understand how voltage opens these channels.
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INTRODUCTION |
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Voltage-gated ion channels are key elements in
the generation of the nervous impulse. They consist of an ion-selective
pore, several activation and inactivation gates, and a voltage-sensing machinery (Hille, 1992
). The recently solved structure of the bacterial
KcsA channel most likely provides a good model of the central,
pore-containing part of voltage-gated potassium channels, including the
gates (Doyle et al., 1998
; Yellen, 1998
). The positively-charged fourth
transmembrane segment (S4) has been identified as voltage sensor
(Mannuzzu et al., 1996
; Larsson et al., 1996
; Seoh et al., 1996
;
Aggarwal and MacKinnon, 1996
; Yusaf et al., 1996
), but its location in
relation to the pore is not known. The purpose of the present study is
to obtain information about this location. Our strategy is to use the
structure of the KcsA channel as a model for the pore region of the
Shaker potassium channel and to measure the effects of
introduced charges in different positions in this region of the
Shaker potassium channel.
Altering the charge of a surface amino acid will alter the electric
field sensed by the voltage sensor and, hence, shift the voltage-dependent parameters of the ion channel along the voltage axis
(McLaughlin, 1989
; Hille, 1992
). These shifts should be larger the
closer the introduced charge is to the moving, charged parts of the
protein. In the latter part of the paper, we will interpret these
shifts as caused by interactions with the extracellular end of the
voltage sensor S4 and translate these shifts into geometrical distances
to this part of S4. We introduce a cysteine at different positions in a
non-inactivating N-terminal deleted Shaker potassium channel
(ShH4IR) and express these channels in Xenopus oocytes. This
allows us to add a negative or a positive charge to the specific positions in situ by modifying the introduced cysteines with
differently-charged reagents (MTSES
or
MTSET+, see Materials and Methods). We selected
four extracellular residues that cover most of the circumference of the
pore-forming part of the channel (Fig.
1): one at the extracellular end of S5
(A419) which has been suggested to be close to S4 (Elinder and Århem, 1999
), two at the extracellular end of S6 (V451 and G452) which are
involved in slow inactivation (Larsson and Elinder, 2000
), and one at
the extracellular end of the pore helix (P430). The results suggest
that the extracellular end of S4 is located close to the extracellular
end of S5.
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MATERIALS AND METHODS |
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Molecular biology
The experiments were performed on Shaker H4 channels
(Kamb et al., 1987
), made incapable of fast-inactivation by the
6-46 deletion (Hoshi et al., 1990
). Cysteines were substituted using the
QuikChange Kit (Stratagene, La Jolla, CA). cRNA was transcribed using
the T7 mMessage mMachine kit (Ambion Inc., Austin, TX) and injected in
Xenopus laevis oocytes (20-5000 pg/cell) using a Nanoject injector (Drummond Scientific Co., Broomall, PA). The oocytes were
maintained at 12°C in a modified Barth's solution (MBS, in mM: 88 NaCl, 1 KCl, 2.4 NaHCO3, 15 HEPES, 0.33 Ca(NO3)2, 0.41 CaCl2, and 0.82 MgSO4)
adjusted to pH 7.5 by NaOH, and supplemented with penicillin (10 µg/ml) and streptomycin (10 µg/ml). The electrophysiological experiments were made 2-20 days after injection of mRNA.
Electrophysiology, solutions, and reagents
The currents were measured with the two-electrode voltage-clamp
technique (CA-1 amplifier, Dagan Corporation, Minneapolis, MN).
Microelectrodes were made from borosilicate glass and filled with a 3M
KCl solution. The resulting resistance varied between 0.5 and 2.0 M
.
The amplifier's capacitance and leak compensation were used, and the
currents were low-pass filtered at 1 kHz. All experiments were carried
out at room temperature (20-23°C). For the electrophysiological
experiments, we used the MBS solution described above. To screen
surface charges, we added 20 mM MgCl2 to the MBS
solution. Mg2+ ions have been shown to shift
voltage-dependent parameters equally and, therefore, have been
suggested to exert pure screening of surface charges without directly
binding to potassium channels (Elinder and Århem, 1998
; Elinder et
al., 1998
). To alter the charge at the substituted cysteines, the
membrane-impermeant thiol reagents, positively-charged MTSET
([2-(trimethylammonium)ethyl]methanethiosulfonate, bromide) and
negatively-charged MTSES (sodium
(2-sulfonatoethyl)methanethiosulfonate) (Toronto Research Chemicals
Inc., North York, Ontario, Canada), were applied continuously in the
bath solution by a gravity-driven perfusion system, and the
modification was assayed functionally in two-electrode voltage-clamped
oocytes, as described earlier (Larsson et al., 1996
; Baker et al.,
1998
). The cysteine reagents were applied to saturation (typically 100 µM MTSET or 1 mM MTSES for 200 s). The molecular structures of
the attached reagents are shown in Fig.
2. The sizes are close to that of the
positively charged amino acid residue arginine.
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Shift measurements
The steady-state potassium conductance
GK(V) was calculated as
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(1) |
80 mV). For 419C, 451C, and 452C, the shifts
of the G(V) curves caused by either MTS reagents
or Mg2+ were measured by sliding the control
G(V) to overlap (most importantly the lower part
of the curves, because the curves were not normalized) the
Mg2+ or MTS G(V). For 430C,
we had to normalize the maximum conductance (at ~+60 mV) before
sliding the G(V) curves.
Calculation of the surface potential
The change in the surface potential caused by the cysteine
reagents was estimated directly from the voltage shift of the
G(V) curve
(
VMTS). To minimize the errors in
our calculations caused by possible nonelectrostatic effects of the MTS
reagents, we calculated the change in surface potential,

, as
(
VMTSET
VMTSES)/2. To confirm that this
shift was caused by a change in the surface charge density and
consequently in the surface potential, we measured the voltage shift of
the G(V) curve induced by an extracellular application of 20 mM Mg2+
(
VMg) and used the Grahame equation
(Grahame, 1947
) for a quantitative evaluation:
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(2) |
is the surface charge density,
r is the dielectric constant of the medium (80 in water),
0 is the permittivity of free space
(8.85 · 10
12
F·m
1),
ci is the bulk concentration, and
zi is the valence of the ith ionic species in the extracellular solution.
is the surface potential. R, T,
and F have their usual thermodynamic significance. To relate
the Mg-induced shift,
VMg, to the
surface potential,
, Eq. 2 has to be solved numerically.
In brief, one has to find the (constant)
value that, for
the two different Mg2+ concentrations
(cMg2+), will give two values of
that differ by
VMg
(see pp 457-470 in Hille (1992)
, and 0.8 anion2
.
Although Eq. 2 is strictly valid only for a uniformly smeared charge,
it has been shown that the equation can be used as an approximation for
charge densities more negative than
0.16 elementary charges per
nm2 (Peitzsch et al., 1995
0.27e
nm
2 (Elinder et al.,
1998
VMg in Table
1) from the measured shifts induced by
the MTS-reagents (
in Table 1) and the
Mg2+-induced shifts of the unmodified channels
(
VMg in Table 1).
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Estimation of the S4 location
The potential
r, at a
distance r, from an elementary charge e located
at the border between a low-dielectric (membrane) and a high-dielectric
(water) medium is (McLaughlin, 1989
; Elinder and Århem, 1999
)
|
(3) |
is the inverse of the Debye length in the
aqueous phase (9.6 Å in the MBS solution, see Elinder and Århem
(1999)
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(4) |

) with the
predicted value from Eq. 4 by
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(5) |


has its smallest value.
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RESULTS |
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MTSET+ and MTSES
shift the
G(V) of 419C in opposite
directions
Figure 3 A shows the
effect of differently-charged cysteine reagents on 419C channels.
MTSES
shifted the conductance versus voltage
curve G(V) in the negative direction along the
voltage axis on average
10.2 mV (Table 1). MTSET+ shifted the G(V) in
the positive direction on average +6.1 mV (Table 1). The amplitude of
the maximum conductance was only marginally affected (<5%). The
shifts caused by MTSES
and
MTSET+ are in opposite directions but not
perfectly symmetrical, suggesting that the structure of the MTS-reagent
itself slightly affects the stability of the channel in some of its
conformational states. To separate the G(V)
shifts caused by electrostatic effects (
) from nonelectrostatic effects of the MTS reagents, we assumed that the
nonelectrostatic effects were the same for the two MTS reagents and
that the difference between the MTSET+-induced
and the MTSES
-induced shifts is equal to
2
. This gave 
= (+6.1
(
10.2))/2 = 8.2 mV. To verify that this value was due to
electrostatic interactions and reflected a change in surface potential,
we analyzed the effects of Mg2+ on the
G(V) curves.
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The 
component of the G(V)
shifts are due to electrostatic interactions
According to the surface charge theory, raising the external
concentration of divalent cations will screen the exposed surface charges and reduce the absolute value of the (negative) surface potential (McLaughlin, 1989
; Hille, 1992
) (see Fig. 3 D).
This reduction in surface potential will lead to a shift of the
voltage-dependent parameters along the voltage axis, which is roughly
proportional to the absolute value of the surface potential. Therefore,
to test if we have altered the surface charge density and consequently the surface potential by the introduced charged MTS reagents, we
perfused the channels with an extracellular solution containing an
increased concentration of MgCl2 (the
Cl
ions having negligible effects according to
Eq. 2).
The application of 20 mM Mg2+ shifted the
G(V) curve
(
VMg) for 419C channels in the
positive direction along the voltage axis (Fig. 3, B and
C) on average +13.8 mV (Table 1).
VMg increased to 16.1 mV (Table 1)
when 419C channels were modified with MTSES
(Fig. 3 B) and decreased to 11.7 mV (Table 1) when 419C
channels were modified with MTSET+ (Fig.
3 C). These results are qualitatively what is expected from
a change in surface potential by the MTS-modifications of 419C. To make
a quantitative evaluation, we used Eq. 2 to calculate the predicted
VMg for the MTS-modified channels
based on the
VMg for the unmodified
channels (+13.8 mV) and on the 
of the MTS-modified
channels (8.2 mV). The predicted shifts were +16.1 mV and +11.5 mV, for
MTSES
- and
MTSET+-modified channels respectively, which are
in agreement with the experimentally found shifts showing that

is of electrostatic origin.
Electrostatic effects of other residues
We have shown that a charge at residue 419 in a Shaker
potassium channel affects the voltage sensing of the channel with ±8.2 mV, the sign depending on the sign of the charge. With the same method
we could also show that a charge at residue 451 affects the voltage
sensing of the channel with ±3.6 mV and a charge at residue 452 affects the voltage sensing of the channel with ±5.6 mV (Table 1). The
effect of the MTS-modification of residue 430C deviated from those of
the other residues. First, the MTS reagents reduced the maximum
conductance considerably: MTSES
by 67 ± 11% (mean ± SD, n = 7), and
MTSET+ by 81 ± 12% (mean ± SD,
n = 5). Second, the MTS-induced shifts were both in the
positive direction: +19.1 mV for MTSES
and
+26.7 mV for MTSET+ (Table 1). This suggests that
the MTS molecules have a major nonelectrostatic effect on the
G(V) curve in addition to a minor electrostatic
effect: a +22.9 mV shift caused by nonelectrostatic effects and a ±3.8
mV shift by electrostatic effects. The
VMg of 430C was not significantly
altered by MTSES
(Table 1). This suggests that
residue 430 contributes very little, or not at all, to the surface
potential felt by the voltage sensor. In the following calculation, we
used the 
values as the estimate of the electrostatic
effect of the introduced charges (for position 430, see also Appendix).
The location of S4
One simple interpretation of our results is that, of the residues studied, residue 419 should be located closest to the voltage sensor S4, whereas residue 452 is located further away from S4, and residues 430 and 451 are located even further from S4. This suggests that S4 is located close to S5 (see Fig. 1). The exact effect of the introduced surface charges on the voltage dependence of the channel depends on the exact movement of all the charged residues of the channel in relation to the introduced charge. In the following quantitative analysis, we will assume that it is mainly the charges in S4 that are moving and that all other charges are relatively immobile. In addition, to make a quantitative estimation of the position of S4, we have to make some assumptions about the structure and the movement of S4.
The S4 segment is most likely an
-helix (Yang et al., 1997
; Cha et
al., 1999
; Glauner et al., 1999
; Li-Smerin et al., 2000a
), which would
make the charges on S4 wrap around this helix like a helical screw
(Catterall, 1986
). The movement of S4 during the opening of the channel
exposes three charged residues into the extracellular solution (Baker
et al., 1998
; Tiwari-Woodruff et al., 2000
), probably reflecting three
consecutive activation steps (Keynes and Elinder, 1999
). If we assume
that the S4 motion is that of a helical screw moving in three steps
(Catterall, 1986
; Keynes and Elinder, 1999
), then this motion is
electrostatically equivalent to moving the three bottom charges from
the cytosol to the extracellular solution while keeping the charges
inside the protein fixed (Fig. 4). Thus,
even though the electrical potential caused by an extracellular surface
charge is not negligible in the membrane, it does not affect the gating
because the intramembranous charge pattern is unaltered during gating
in this model. Furthermore, the electrical potential caused by an
extracellular surface charge is negligible at the intracellular side of
the membrane (see Fig. 5 in Mathias et al., 1992
). For the following
quantitative analysis, we used this helical-screw model of S4 motion.
In this model, it is only the electrical potential at the extracellular
surface where the three top S4 charges (R362, R365, and R368) emerge, that determines the size of the G(V) shift caused
by changes of the extracellular surface charges. The three top charges
on S4 would all lie on the same side of an
-helix (Fig. 4) and we
have, in the following approximate calculation, treated them as a point charge (for quantitative justifications see Appendix).
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We used Eq. 4 to predict the surface potential at different positions

pred(x, y)
caused by the introduction of a charged residue in all four subunits.
We calculated the differences between our experimental data,

, and the predicted values

pred(x, y)
for all possible positions (x, y) of the top
charges of S4 on the channel surface (see Materials and Methods). The
smaller the difference is for a certain position of S4, the higher the probability that S4 is located at that position. Fig.
5 A shows the r.m.s. values
of these differences calculated for the entire channel surface. The
resulting landscape shows four distinct valleys (red) at a
distance of ~11 Å outside the center of the extracellular end of S5.
These valleys suggest, under the assumption of the helical-screw model
above, the location of the top charges of S4. The low error value at
the minimum (0.77 mV) indicates that it is a good fit to our data.
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DISCUSSION |
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We have tested the effect of an introduced charge at different positions in the extracellular end of the pore domain of Shaker potassium channels. The key finding was that a charge in S5 (residue 419) electrostatically affects the voltage sensor more than a charge at other positions. Assuming that the electrostatic effects are with the charges in S4, this suggests that S4 is located close to S5. We also made a quantitative estimation of the location of S4, under the assumption of helical-screw motion, that indicates that the top S4 charges in the activated position are located ~11 Å from the center of the extracellular end of S5 (Fig. 5 A). It should be pointed out that, in our study, we do not obtain any information about the location of the intracellular end of S4. S4 could very well be tilted, and we have in Fig. 5 B suggested a possible three-dimensional location of S4.
The presented location of S4 deviates from recent suggestions. Studies
based on tryptophan or alanine scanning, or energy-minimizing computer
calculations tentatively locate S4 close to the interface between the
subunits in voltage-gated potassium channels (Durell et al., 1998
;
Li-Smerin et al., 2000a
,b
; Hong and Miller, 2000
). However, these
investigations were not directly aimed at localizing S4 in relation to
the pore.
Our calculation above was done with some simplistic assumptions: the
exact positions of the side chains containing the charged groups, the
local dielectric environment around the surface charges, and the
position of S4 in the z-direction. However, calculations with reasonable variations of these assumptions show that the top
charges of S4 are always located closer to the extracellular end of S5
than to S6 or the P helix (see Appendix). The calculations above were
also done under the assumption of a helical-screw motion of S4
(Catterall, 1986
; Baker et al., 1998
; Keynes and Elinder 1999
). Other
models of the S4 motion have also been suggested (Aggarwal and
MacKinnon, 1996
; Papazian and Bezanilla, 1997
; but see Horn, 2000
).
However, the fact that charges introduced in S5 have larger
electrostatic effects than charges in other parts of the pore region
suggests, for most models of S4 motion, that S4 is closest to S5.
In Fig. 5 we have, in addition to the position of S4, indicated
tentative positions of the S1-S3 segments, based on experimental results from other studies (Tiwari-Woodruff et al., 1997
; Baker et
al., 1998
; Li-Smerin et al., 2000a
,b
; Hong and Miller, 2000
). The top
S4 charges (R362, R365, and R368) are located in the extracellular solution (Baker et al., 1998
), close to the red spot, while the S4
charges in the membrane (R371, K374, and R377) can make the interactions, with negative charges in S2 and S3, that were identified in intragenic suppression investigations (Tiwari-Woodruff et al., 1997
). Large parts of S1 and S2 are facing the lipids, whereas S3
(placed in the groove between subunits) is mainly facing protein surfaces (Li-Smerin et al., 2000a
; Hong and Miller, 2000
). Finally, a
portion of S5 is facing the lipids in contrast to the rest of the
S5-S6 pore domain (Li-Smerin et al., 2000b
). The suggested location of
S4 would allow for large scale movements of S4 (e.g., helical screw
motion) because one side (the hydrophobic side) of the transmembrane
portion of the S4 helix would be facing the fluid lipid bilayer (Fig.
5). The main difference with the earlier work (e.g., Li-Smerin et al.,
2000a
,b
) is that we place S3 at the center of the subunit instead of
S4. Li-Smerin and coworkers mapped the residues of the pore region that
is interacting with the voltage sensor module (i.e., S1-S4). In our
model, this would suggest that it was S3's interaction surface with
the pore region that was mapped in their work.
The present estimation of the location of S4 is important for future
studies in determining the molecular coupling between the movement of
the voltage sensor and the opening of the pore. It may also serve as
guideline for future mapping of the outer segments S1, S2, and S3, as
well as auxiliary
-subunits (Gulbis et al., 1999
) in relation to the
pore. Furthermore, the present method to determine structural features
of the Shaker potassium channel can be used for other
proteins where electrostatic effects are important.
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APPENDIX: ERROR ESTIMATION IN S4 LOCATION |
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In the calculation in Fig. 5 A, we assumed that the
three top S4 charges can be treated as a point charge. We have remade the calculation with the three charges placed as on an
-helix; each
charge at the end of an arginine side chain in every third position of
an
-helix (i.e., 60° between the residues when viewed along the
central axis), and with the assumption that the total G(V) shift is equal to the average surface charge
effect on the three top S4 charges. The S4 helix was translated in the
plane of the channel surface and rotated, in steps of 10°, around the z axis to reach the smallest r.m.s. deviation between the
experimental G(V) shifts (i.e.,

) and the theoretical effects of the introduced surface charges on the S4 charges. The position of the center of the
three charges that gave the smallest r.m.s deviation was within the
bright red area in Fig. 5 A for every possible rotation of
S4, indicting that our approximation of the three charges as a point
charge does not greatly effect the result. The center of the S4 helix
was always located <8 Å away from the hot spot in Fig.
5 A. The exact position of S4 depends also on the exact kinetic model for the opening/closing of the channels (i.e., which transition in the activation pathway causes the largest shift in the
G(V) for a change in the surface potential).
However, the G(V) shift is always smaller or
equal to the change in surface potential at the most affected of the
three top S4 charges. Therefore, it can be argued that the hotspot in
Fig. 5 A is an upper limit of the distance between the
surface charge and the nearest S4 charge, because, for any other
assumption, at least one of the S4 charges has to be closer than this
distance to get the experimentally observed G(V)
shift. This would move S4 closer to the pore region than in Fig. 5.
We identify four other possible sources of errors in our estimation of
the location of S4, besides uncertainties in the exact model of the
transmembrane motion of S4 discussed above:
| 1. | For the locations of the introduced surface charges, we have used the positions indicated in Fig. 5 A. The positions of the side chains in Shaker are not necessarily the same as those in KscA. To estimate the sensitivity of our calculation to small changes in these positions, we made calculations where all charges, independent of each other, were moved up to 3 Å in all directions in the plane of the surface. The most likely position of S4 was still within the bright red area in Fig. 5 A. |
| 2. | The introduced surface charges are all located approximately in one plane (Fig. 1, bottom), but the position of the top S4 charges in the z-direction compared to this plane is unknown. In Fig. 5, we assumed that the top S4 charges are in this plane in the open state. We also made calculations in which the position of the top S4 charges was changed up to 12 Å in the z-direction compared to this plane. The effect of this change was that the hot spot moved closer to S5 in the x y plane.
|
| 3. | The absolute value of the electrostatic effect of charged residues at 430 was difficult to determine. We tested ![]() values between 0 and 6 mV for this position in the calculations. The corresponding change in the position of the minimum in Fig. 5 A was <1 Å.
|
| 4. | To calculate the distance between S4 and a surface charge, we used Eq. 3, which is valid for charges on a flat surface at the border between a low-dielectric and a high-dielectric medium (McLaughlin, 1989 |
We conclude that the position of the minimum indicated in Fig. 5 A is not sensitive to small changes in the assumptions of the calculation and (under the assumption of a helical-screw motion of S4) that the top S4 charges are located at this minimum, or even closer to S5.
| |
ACKNOWLEDGMENTS |
|---|
We are grateful to Hans Elinder and Kristina Hasslund for some of the recordings, to Bo Rydqvist for comments on the manuscript, to Peter Löw for molecular enlightment, and to Carol Larsson and Russel Hill for editing the manuscript.
This work was supported by grants from the Swedish Medical Research Council (013043, 06552, 12554), Åke Wibergs Stiftelse, Magn. Bergvalls Stiftelse, The Swedish Society of Medicine, and Jeanssons Stiftelser.
F.E. and P.L. have junior research positions at the Swedish Medical Research Council.
| |
FOOTNOTES |
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Received for publication 11 September 2000 and in final form 23 January 2001.
Address reprint requests to Peter Århem, The Nobel Institute for Neurophysiology, Dept. of Neuroscience, Berzelius väg 3, Karolinska Institutet, S-171 77 Stockholm, Sweden. Tel.: +46-8-728-69-03; Fax: +46-8-34-95-44; E-mail: peter.arhem{at}neuro.ki.se.
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Biophys J, April 2001, p. 1802-1809, Vol. 80, No. 4
© 2001 by the Biophysical Society 0006-3495/01/04/1802/08 $2.00
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J. F. Consiglio and S. J. Korn Influence of Permeant Ions on Voltage Sensor Function in the Kv2.1 Potassium Channel J. Gen. Physiol., March 29, 2004; 123(4): 387 - 400. [Abstract] [Full Text] [PDF] |
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A. Broomand, R. Mannikko, H. P. Larsson, and F. Elinder Molecular Movement of the Voltage Sensor in a K Channel J. Gen. Physiol., November 24, 2003; 122(6): 741 - 748. [Abstract] [Full Text] [PDF] |
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Y.-C. Yang and C.-C. Kuo The Position of the Fourth Segment of Domain 4 Determines Status of the Inactivation Gate in Na+ Channels J. Neurosci., June 15, 2003; 23(12): 4922 - 4930. [Abstract] [Full Text] [PDF] |
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Q. H. Aziz, C. J. Partridge, T. S. Munsey, and A. Sivaprasadarao Depolarization Induces Intersubunit Cross-linking in a S4 Cysteine Mutant of the Shaker Potassium Channel J. Biol. Chem., November 1, 2002; 277(45): 42719 - 42725. [Abstract] [Full Text] [PDF] |
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H. P. Larsson The Search Is on for the Voltage Sensor-to-gate Coupling J. Gen. Physiol., September 30, 2002; 120(4): 475 - 481. [Full Text] [PDF] |
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C. Gonzalez, E. Rosenman, F. Bezanilla, O. Alvarez, and R. Latorre Periodic perturbations in Shaker K+ channel gating kinetics by deletions in the S3-S4 linker PNAS, August 1, 2001; (2001) 171306298. [Abstract] [Full Text] [PDF] |
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