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Equipe de Dynamique des Assemblages Membranaires, Unité Mixte de Recherche CNRS/UHP 7565 Université Henri-Poincaré, 54506 Vand
uvre-lès-Nancy, France
Correspondence: Address reprint requests and inquiries to Mounir Tarek, E-mail mtarek{at}edam.uhp-nancy.fr.
| ABSTRACT |
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Three molecular models have been proposed so far for the activation of Kv channels (1
). These models disagree, in particular, by the fashion in which the voltage-sensor and the pore domains are coupled. In the conventional model, S4 helices are buried in the protein and slide in a large piston-like motion (2
4
). In the transporter model, a specific hydration of S4 shapes the electric field in the transmembrane domain region and small upward motion of S4 leads to the channel opening (5
8
). The paddle model is based on the x-ray structure of the archeabacterial KvAP channel (9
), in which the so-called voltage-sensor paddle undergoes a large upward movement. This model disagrees, however, with several experiments on eukaryotic channels (10
17
). Furthermore, the very recent x-ray structure of the Kv1.2 Shaker channel (18
) reveals that the paddle model does not describe the activation mechanism of this eukaryotic channel. In the Kv1.2 structure, S4 is perpendicular to the membrane in agreement with the classical view. With this structure at hand, it is still unclear how Kv channels function, and what possible conformational changes take place during activation.
Here we study, using molecular dynamics (MD) simulations, the molecular properties of the Kv1.2 Shaker channel embedded in a membrane environment considering as a framework the x-ray structure (cf. Fig. 1 and Supplementary Material). The MD simulation was performed at constant pressure (1 atm) and constant temperature (300 K) for 9 ns. Analysis of the pore volume highlights the conductive (open) state of the channel. The largest accessible volume of the conduction pathway occurs in the intermediate region between the T1 and the TM domains. The volume becomes then narrower in the region of the activation gate, where Val410 constitutes the major constraining element along the pathway. This residue has been suggested to constitute a hydrophobic gate obstructing the ion-conduction pathway in the closed state of the channel (19
). For the present conformation, this gate delineates a pore of radius
4.5 Å, e.g., large enough to allow ion translocation.
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The local environment (specific hydration) of the gating charges changes drastically the morphology of the electrostatic potential (EP). As shown in Fig. 3, the EP collapses around S4 helices. The hydrated environment of S4 favors a focused electric field around the arginines. This has been suggested to explain the exquisite electric sensitivity of Kv channels (20
,25
).
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14 Å) are too far away to allow spontaneous formation of a disulphide bridge. These interacting pairs join the top region of segments S4 and S5 of adjacent subunits. This region is quite rigid as revealed by a root mean square deviation analysis, raising the possibility that S4 may be positioned too far from S5.
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10 Å, is required to expose or to protect biontinylated sites. Given the original KvAP structure in which S3-S4 forms a paddle, it was assumed that such displacement of S4 is vertical.
One possible interpretation to reconcile these experimental findings is an activation mechanism in which S4 tilt and/or displace laterally. To make our point we consider specific interactions between S4 and S5 identified in the resting (closed) state. An intersubunit disulphide bridge involving Ser289-Glu350 was measured in Shaker B (13
). Short distances were also identified for Val295-Phe342 and Phe305-Phe336 in the homologous KAT1 channel (29
). For the present "open" Kv1.2 structure, these distances average, respectively, to 16, 20, and 14 Å. Fig. 4 shows clearly that a lateral displacement of S4 toward S5 would shorten those distances to comply with the above experiments. We argue, therefore, based on this, that a possible route from the closed to the open state is a lateral displacement of S4 and not necessarily a large vertical displacement.
How such mechanism, involving a limited vertical displacement of S4, may explain the well-known gating current in Kv channels? In the transporter model, it is proposed that gating current results from changes in the dielectric environment during activation (27
,28
). Chanda et al. (27
) used a molecular model of a Shaker channel embedded in a low dielectric membrane continuum that mimics a lipid bilayer. Gating charges of
14e were measured considering a small (2 Å) vertical displacement of S4, when the local dielectric was distorted by protrusion of solvent crevices. Using an atomistic model of the Shaker B (30
), we find indeed that the protrusion of water around S4 changes drastically the morphology of the local electrostatic potential during activation (cf. Supplementary Material).
In conclusion, the simulation studies of the Kv1.2 in a realistic membrane environment reveal many interesting features that appear to comply with the transporter model.
| SUPPLEMENTARY MATERIAL |
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| ACKNOWLEDGEMENTS |
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This work was supported by an Action Thématique Anticipée sur Program (ATIP) grant (2JE153) from the Centre National de la Recherche Scientifique (CNRS) to M.T. and by a CNRS postdoctoral fellowship to W.T.
Submitted on January 3, 2006; accepted for publication February 24, 2006.
| REFERENCES |
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